DCR1910V80 datasheet(6/9 Pages) DYNEX

Part #	DCR1910V80

Description	Phase Control Thyristor Preliminary Information

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SEMICONDUCTOR

DCR1910V85

6/9

www.dynexsemi.com

0

10

20

30

40

50

60

70

80

90

100

110

120

130

0

500 1000 1500 2000 2500 3000 3500 4000 4500

Mean on-state current, IT(AV) - (A)

d.c.

180

120

90

60

30

0

10

20

30

40

50

60

70

80

90

100

110

120

130

0

500 1000 1500 2000 2500 3000 3500 4000

Mean on-state current, IT(AV) - (A)

d.c.

180

120

90

60

30

Fig.7 Maximum permissible case temperature,

double side cooled – rectangular wave

Fig.8 Maximum permissible heatsink temperature,

double side cooled – rectangular wave

0

2

4

6

8

10

12

14

16

18

20

0.001

0.01

0.1

1

10

100

Time ( s )

Double Side

Cooling

Anode Side

Cooling

Cathode

Sided Cooling

1

2

3

4

Double side cooled

Ri (°C/kW)

0.9206

1.8299

3.4022

1.3044

Ti (s)

0.0076807

0.0579454

0.4078613

1.2085

Anode side cooled

Ri (°C/kW)

0.9032

1.6719

3.0101

7.4269

Ti (s)

0.0075871

0.0536531

0.3144537

5.624

Cathode side cooled

Ri (°C/kW)

0.9478

2.0661

1.6884

13.0847

Ti (s)

0.0078442

0.0645541

0.3894389

4.1447

Zth =

Σ [Ri x ( 1-exp. (t/ti))]

[1]

∆R

th(j-c) Conduction

Tables show the increments of thermal resistance Rth(j-c) when the device

operates at conduction angles other than d.c.

Double side cooling

Anode Side Cooling

Cathode Sided Cooling

∆Zth (z)

θ°

sine.

rect.

θ°

sine.

rect.

θ°

sine.

rect.

180

1.34

0.88

180

1.34

0.88

180

1.33

0.88

120

1.57

1.30

120

1.57

1.30

120

1.57

1.29

90

1.83

1.54

90

1.84

1.54

90

1.83

1.53

60

2.08

1.81

60

2.08

1.81

60

2.07

1.80

30

2.27

2.11

30

2.28

2.11

30

2.26

2.10

15

2.36

2.28

15

2.37

2.28

15

2.35

2.26

Fig.9 Maximum (limit) transient thermal impedance – junction to case (°C/kW)

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