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GWM70-01P2 Datasheet(PDF) 1 Page - IXYS Corporation

Part No. GWM70-01P2
Description  Three phase full bridge with Trench MOSFETs in DCB isolated high current package
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Maker  IXYS [IXYS Corporation]
Homepage  http://www.ixys.com
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GWM70-01P2 Datasheet(HTML) 1 Page - IXYS Corporation

   
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© 2006 IXYS All rights reserved
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Advanced Technical Information
GWM 70-01P2
Three phase full bridge
with Trench MOSFETs
in DCB isolated high current package
Applications
AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Features
• MOSFETs in trench technology:
- low R
DSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability
- auxiliary terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
V
DSS
= 100 V
I
D25
= 70 A
R
DSon typ. = 11 m
MOSFETs
Symbol
Conditions
Maximum Ratings
V
DSS
T
VJ = 25°C to 150°C
100
V
V
GS
±20
V
I
D25
T
C = 25°C
70
A
I
D90
T
C = 90°C
50
A
I
F25
T
C = 25°C (diode)
130
A
I
F90
T
C = 90°C (diode)
85
A
Symbol
Conditions
Characteristic Values
(T
VJ = 25°C, unless otherwise specified)
min.
typ.
max.
R
DSon
on chip level at
T
VJ =
25°C
11
14 m
V
GS = 10 V; ID = 35 A
T
VJ = 125°C
24
m
V
GSth
V
DS = 20 V; ID = 1 mA
2
4
V
I
DSS
V
DS = VDSS; VGS = 0 V; TVJ =
25°C
1
µA
T
VJ = 125°C
0.1
mA
I
GSS
V
GS = ±20 V; VDS = 0 V
0.2
µA
Q
g
110
nC
Q
gs
18
nC
Q
gd
44
nC
t
d(on)
35
ns
t
r
85
ns
t
d(off)
150
ns
t
f
70
ns
V
F
(diode) I
F = 35 A; VGS= 0 V
0.8
1.25
V
t
rr
(diode) I
F = 75 A; -di/dt = 100 A/µs; VDS = 30 V80
ns
R
thJC
0.85 K/W
R
thJH
with heat transfer paste
1.7
K/W
V
GS= 10 V; VDS = 80 V; ID = 25 A
V
GS= 10 V; VDS = 30 V;
I
D = 25 A; RG = 10
IXYS reserves the right to change limits, test conditions and dimensions.
Power
Pins
Gate
Pins
L +
G1
S1
G2
S2
L -
G3
S3
G4
S4
G5
S5
G6
S6
L1
L2
L3


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