Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

2SK2275 Datasheet(PDF) 1 Page - NEC

Part No. 2SK2275
Description  SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
Logo NEC - NEC

2SK2275 Datasheet(HTML) 1 Page - NEC

  2SK2275 Datasheet HTML 1Page - NEC 2SK2275 Datasheet HTML 2Page - NEC 2SK2275 Datasheet HTML 3Page - NEC 2SK2275 Datasheet HTML 4Page - NEC 2SK2275 Datasheet HTML 5Page - NEC 2SK2275 Datasheet HTML 6Page - NEC 2SK2275 Datasheet HTML 7Page - NEC 2SK2275 Datasheet HTML 8Page - NEC  
Zoom Inzoom in Zoom Outzoom out
 1 / 8 page
background image
©
1995
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2275
DESCRIPTION
The 2SK2275 is N-channel Power MOS Field Effect Transis-
tor designed for high voltage switching applications.
FEATURES
Low On-state Resistance
RDS(on) = 2.8
Ω MAX. (VGS = 10 V, ID = 2.0 A)
LOW Ciss
Ciss = 1 000 pF TYP.
High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Drain to Source Voltage
VDSS
900
V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID (DC)
±3.5
A
Drain Current (pulse)
ID (pulse)*
±14
A
Total Power Dissipation (TC = 25
°C) PT1
35
W
Total Power Dissipation (Ta = 25
°C) PT2
2.0
W
Storage Temperature
Tstg
–55 to +150
°C
Channel Temperature
Tch
150
°C
Single Avalanche Current
IAS**
3.5
A
Single Avalanche Energy
EAS**
22
mJ
*PW
≤ 10
µs, Duty Cycle ≤ 1%
**Starting Tch = 25
°C, RG = 25 Ω, VGS = 20 V → 0
The diode connected between the gate and source of the
transistor serves as a protector against ESD. When this device
is actually used, an additional protection circuit is externally
required if a voltage exceeding the rated voltage may be
applied to this device.
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No.
TC-2510
(O.D. No.
TC–8069)
Date Published
February 1995 P
Printed in Japan
10.0 ± 0.3
φ3.2 ± 0.2
4.5 ± 0.2
2.7 ± 0.2
2.5 ± 0.1
0.65 ± 0.1
1.5 ± 0.2
2.54 TYP.
1.3 ± 0.2
2.54 TYP.
0.7 ± 0.1
12 3
1. Gate
2. Drain
3. Source
Body diode
Source (S)
Drain (D)
Gate (G)
12 3
PACKAGE DIMENSIONS
(in millimeters)
MP-45F (ISOLATED TO-220)


Html Pages

1  2  3  4  5  6  7  8 


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn