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2SK2275 Datasheet(PDF) 2 Page - NEC

Part No. 2SK2275
Description  SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
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Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
Logo NEC - NEC

2SK2275 Datasheet(HTML) 2 Page - NEC

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2SK2275
2
Test Circuit 1: Avalanche Capability
Test Circuit 2: Switching Time
Test Circuit 3: Gate Charge
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Drain to Source On-state Resistance
RDS(on)
2.2
2.8
VGS = 10 V, ID = 2 A
Gate to Source Cutoff Voltage
VGS(off)
2.5
3.5
V
VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
 yfs
1.0
S
VDS = 20 V, ID = 2 A
Drain Leakage Current
IDSS
100
µA
VDS = 900 V, VGS = 0
Gate to Source Leakage Current
IGSS
±10
µA
VGS =
±30 V, VDS = 0
Input Capacitance
Ciss
1 000
pF
VDS = 10 V
Output Capacitance
Coss
170
pF
VGS = 0
Reverse Transfer Capacitance
Crss
60
pF
f = 1 MHz
Turn-On Delay Time
td(on)
20
ns
VGS = 10 V
Rise Time
tr
20
ns
VDD = 150 V
Turn-Off Delay Time
td(off)
90
ns
ID = 2 A, RG = 10
Fall Time
tf
20
ns
RL = 75
Total Gate Charge
QG
42
nC
VGS = 10 V
Gate to Source Charge
QGS
6.0
nC
ID = 3.5 A
Gate to Drain Charge
QGD
20
nC
VDD = 450 V
Diode Forward Voltage
VF(S-D)
0.9
V
IF = 3.5 A, VGS = 0
Reverse Recovery Time
trr
480
ns
1F = 3.5 A
Reverse Recovery Charge
Qrr
2.5
µC
di/dt = 50 A/
µs
VGS = 20
→ 0 V
PG.
RG = 25
50
D.U.T.
L
VDD
PG.
RG = 10
D.U.T.
RL
VDD
RG
PG.
IG = 2 mA
50
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 s
Duty Cycle
≤ 1%
VGS
Wave
Form
ID
Wave
Form
VGS
ID
10 %
10 %
0
0
90 %
90 %
90 %
10 %
VGS (on)
ID
ton
toff
td (on)
tr
td (off)
tf
τ
µ
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.


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