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2SC5754 Datasheet(PDF) 3 Page - NEC

Part No. 2SC5754
Description  NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
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Maker  NEC [NEC]
Homepage  http://www.nec.com/
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2SC5754 Datasheet(HTML) 3 Page - NEC

 
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Data Sheet PU10008EJ02V0DS
3
2SC5754
ELECTRICAL CHARACTERISTICS (TA = +25
°°°°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
−−
1 000
nA
Emitter Cut-off Current
IEBO
VBE = 1 V, IC = 0 mA
−−
1 000
nA
DC Current Gain
hFE
Note 1
VCE = 3 V, IC = 100 mA
40
60
100
RF Characteristics
Gain Bandwidth Product
fT
VCE = 3 V, IC = 100 mA, f = 0.5 GHz
16
20
GHz
Insertion Power Gain
S21e2 VCE = 3 V, IC = 100 mA, f = 2 GHz
5.0
6.5
dB
Reverse Transfer Capacitance
Cre
Note 2
VCB = 3 V, IE = 0 mA, f = 1 MHz
1.0
1.5
pF
Maximum Available Power Gain
MAG
Note 3
VCE = 3 V, IC = 100 mA, f = 2 GHz
12.0
dB
Linear Gain
GL
VCE = 3.6 V, ICq = 20 mA, f = 1.8 GHz,
Pin = 0 dBm, 1/2 Duty
12.0
dB
Gain 1 dB Compression Output Power
PO (1 dB)
VCE = 3.6 V, ICq = 4 mA, f = 1.8 GHz,
Pin = 15 dBm, 1/2 Duty
26.0
dBm
Collector Efficiency
ηC
VCE = 3.6 V, ICq = 4 mA, f = 1.8 GHz,
Pin = 15 dBm, 1/2 Duty
60
%
Notes 1. Pulse measurement: PW
≤ 350
µs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
3. MAG =
hFE CLASSIFICATION
Rank
FB
Marking
R57
hFE Value
40 to 100
(K –
√√√√ (K2 – 1) )
S21
S12


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