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SI3424DV Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SI3424DV
Description  N-Channel 30-V (D-S) MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SI3424DV Datasheet(HTML) 2 Page - Vishay Siliconix

   
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Si3424DV
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71317
S-02157—Rev. A, 02-Oct-00
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 mA
0.8
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
VDS = 24 V, VGS = 0 V
1
m
Zero Gate Voltage Drain Current
IDSS
VDS = 24 V, VGS = 0 V, TJ = 70_C
5
mA
On-State Drain Currenta
ID(on)
VDS w 5 V, VGS = 10 V
30
A
a
VGS = 10 V, ID = 6.7A
0.023
0.028
W
Drain-Source On-State Resistancea
rDS(on)
VGS = 4.5 V, ID = 5.7A
0.032
0.038
W
Forward Transconductancea
gfs
VDS = 10 V, ID = 6.7A
14
S
Diode Forward Voltagea
VSD
IS = 1.7 A, VGS = 0 V
0.8
1.2
V
Dynamicb
Total Gate Charge
Qg
11.5
18
Gate-Source Charge
Qgs
VDS = 15 V, VGS = 10 V, ID = 6.7 A
1.6
nC
Gate-Drain Charge
Qgd
3.2
Turn-On Delay Time
td(on)
7
15
Rise Time
tr
VDD = 15 V, RL = 15 W
10
20
Turn-Off Delay Time
td(off)
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
20
40
ns
Fall Time
tf
11
20
Source-Drain Reverse Recovery Time
trr
IF = 1.7 A, di/dt = 100 A/ms
40
80
Notes
a.
Pulse test; pulse width
v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
6
12
18
24
30
0
1234
5
0
6
12
18
24
30
01234
VGS = 10 thru 5 V
TC = –55_C
125
_C
2 V
25
_C
Output Characteristics
Transfer Characteristics
VDS – Drain-to-Source Voltage (V)
VGS – Gate-to-Source Voltage (V)
3 V
4 V


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