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SI3424DV Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI3424DV Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 4 page Si3424DV Vishay Siliconix New Product Document Number: 71317 S-02157—Rev. A, 02-Oct-00 www.vishay.com 1 N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.028 @ VGS = 10 V 6.7 30 0.038 @ VGS = 4.5 V 5.7 (1, 2, 5, 6) D (3) G (4) S N-Channel MOSFET TSOP-6 Top View 6 4 1 2 3 5 2.85 mm 3 mm ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 V _ TA = 25_C 6.7 5.0 Continuous Drain Current (TJ = 150_C)a TA = 70_C ID 5.4 4.0 Pulsed Drain Current IDM 30 A Continuous Source Current (Diode Conduction)a IS 1.7 1.0 TA = 25_C 2.0 1.14 Maximum Power Dissipationa TA = 70_C PD 1.3 0.73 W Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t v 5 sec 40 62.5 Maximum Junction-to-Ambienta Steady State RthJA 90 110 _C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 25 30 C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. |
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