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IXFN130N30 Datasheet(PDF) 4 Page - IXYS Corporation

Part # IXFN130N30
Description  HiPerFET Power MOSFETs Single Die MOSFET
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXFN130N30 Datasheet(HTML) 4 Page - IXYS Corporation

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IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
Pulse Width - Seconds
10-4
10-3
10-2
10-1
100
101
0.001
0.010
0.100
V
DS - Volts
0
5
10
15
20
25
30
35
40
0
3000
6000
9000
12000
15000
18000
V
SD - Volts
0.3
0.6
0.9
1.2
1.5
1.8
0
40
80
120
160
200
Gate Charge - nC
0
100
200
300
400
500
0
2
4
6
8
10
12
Vds=300V
I
D=30A
I
G=10mA
C
RSS
C
OSS
C
ISS
V
DS = 150V
I
D = 65A
I
G = 10mA
f = 100KHz
T
J = 25
OC
T
J = 125
OC
Single Pulse
Figure 7. Gate Charge
Figure 8. Capacitance Curves
Figure 9. Forward Voltage Drop of the
Intrinsic Diode
Figure 10. Transient Thermal Resistance
IXFN 130N30


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