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IXFN130N30 Datasheet(PDF) 4 Page - IXYS Corporation |
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IXFN130N30 Datasheet(HTML) 4 Page - IXYS Corporation |
4 / 4 page IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 Pulse Width - Seconds 10-4 10-3 10-2 10-1 100 101 0.001 0.010 0.100 V DS - Volts 0 5 10 15 20 25 30 35 40 0 3000 6000 9000 12000 15000 18000 V SD - Volts 0.3 0.6 0.9 1.2 1.5 1.8 0 40 80 120 160 200 Gate Charge - nC 0 100 200 300 400 500 0 2 4 6 8 10 12 Vds=300V I D=30A I G=10mA C RSS C OSS C ISS V DS = 150V I D = 65A I G = 10mA f = 100KHz T J = 25 OC T J = 125 OC Single Pulse Figure 7. Gate Charge Figure 8. Capacitance Curves Figure 9. Forward Voltage Drop of the Intrinsic Diode Figure 10. Transient Thermal Resistance IXFN 130N30 |
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