BUX81

Document Number 5865

Issue 1

Collector – Emitter Voltage

Collector – Emitter Voltage

Collector – Emitter Voltage(open base)

Collector Current (d.c)

Peak Collector Current

Base Current (d.c)

Storage Temperature Range

Maximum Junction Temperature

1000V

500V

450V

10A

15A

4A

150W

-65 to +200°C

+200°C

MECHANICAL DATA

Dimensions in mm (inches)

12

3

(case)

25.15 (0.99)

26.67 (1.05)

10.67 (0.42)

11.18 (0.44)

3.84 (0.151)

4.09 (0.161)

7.92 (0.312)

12.70 (0.50)

6.35 (0.25)

9.15 (0.36)

1.52 (0.06)

3.43 (0.135)

HIGH CURRENT

HIGH SPEED

HIGH POWER

SILICON NPN PLANAR

TRANSISTOR

TO–204AA (TO–3)

PIN 1 — Base

PIN 2 — Emitter

Case is Collector.

Applications

The BUX81 is an epitaxial silicon NPN planar transistor that

has high current and high power handling capability and

high switching speed.

This device is especially suitable for switching–control

amplifiers, power gates, switching regulators, power-switch-

ing circuits converters, inverters and control circuits.Other

recommended applications include DC–RF amplifiers and

power oscillators.

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab encourages customers to verify that datasheets are current before placing orders.