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TIM3438-16SL Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part No. TIM3438-16SL
Description  MICROWAVE POWER GaAs FET
Download  2 Pages
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TIM3438-16SL Datasheet(HTML) 2 Page - Toshiba Semiconductor

   
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TIM3438-16SL
ABSOLUTE MAXIMUM RATINGS
( Ta= 25
°C )
CHARACTERISTICS
SYMBOL
UNIT
RATING
Drain-Source Voltage
VDS
V
15
Gate-Source Voltage
VGS
V
-5
Drain Current
IDS
A
13
Total Power Dissipation (Tc= 25
°C)
PT
W
75
Channel Temperature
Tch
°C
175
Storage Temperature
Tstg
°C
-65 to +175
PACKAGE OUTLINE (2-16G1B)
Unit in mm
(1) Gate
(2) Source
(3) Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260
°C.
0.7
±0.15
20.4
±0.3
24.5 MAX.
4
– C1.0
(1)
(2)
(2)
(3)
16.4 MAX.


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