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BSS89 Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. BSS89
Description  N-channel enhancement mode vertical D-MOS transistor
Download  8 Pages
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BSS89 Datasheet(HTML) 3 Page - NXP Semiconductors

   
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1998 Apr 24
3
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSS89
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the Limiting values and Thermal characteristics
1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for drain lead
minimum 10
× 10 mm.
CHARACTERISTICS
Tj =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage (DC)
200
V
VGSO
gate-source voltage (DC)
open drain
−±20
V
ID
drain current (DC)
300
mA
IDM
peak drain current
1.2
A
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
1W
Tstg
storage temperature
−55
+150
°C
Tj
junction temperature
150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
125
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage VGS = 0; ID = 250 µA
200
−−
V
VGSth
gate-source threshold voltage
VDS =VGS; ID = 1 mA
0.8
2.8
V
IDSS
drain-source leakage current
VDS = 60 V; VGS =0
−−
200
nA
VDS = 200 V; VGS =0
0.1
60
µA
IGSS
gate leakage current
VDS = 0; VGS = ±20 V
−−±100
nA
RDSon
drain-source on-state resistance VGS =10V; ID = 400 mA
4.5
6
y
fs
forward transfer admittance
ID = 400 mA; VDS = 25 V
140
350
mS
Ciss
input capacitance
VDS = 25 V; VGS = 0; f = 1 MHz
45
pF
Coss
output capacitance
VDS = 25 V; VGS = 0; f = 1 MHz
15
pF
Crss
reverse transfer capacitance
VDS = 25 V; VGS = 0; f = 1 MHz
3.5
pF
Switching times (see Figs 2 and 3)
ton
turn-on time
VGS =0to10V; VDD =50V;
ID = 250 mA
5
ns
toff
turn-off time
VGS =10to0V; VDD =50V;
ID = 250 mA
15
ns


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