Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF HTML

IRLR110A Datasheet(PDF) 2 Page - Fairchild Semiconductor

Part No. IRLR110A
Description  Advanced Power MOSFET
Download  9 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo 

IRLR110A Datasheet(HTML) 2 Page - Fairchild Semiconductor

   
Zoom Inzoom in Zoom Outzoom out
 2 / 9 page
background image
IRLR/U110A
100
--
1.0
--
--
--
--
--
0.1
--
--
--
--
--
50
20
8
10
17
8
5.5
0.9
3.5
--
--
2.0
100
-100
10
100
0.44
--
235
65
25
25
30
45
25
8
--
--
3.2
180
--
--
--
85
0.23
4.7
16
1.5
--
--
Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=4mH, I
AS=4.7A, VDD=25V, RG=27, Starting TJ =25°C
(3) I
SD ≤ 5.6A, di/dt ≤ 250A/µs, VDD ≤ BVDSS , Starting TJ =25°C
(4) Pulse Test: Pulse Width = 250
µs, Duty Cycle ≤ 2%
(5) Essentially Independent of Operating Temperature
2
1&+$11(/
32:(5 026)(7
Electrical Characteristics (T
C=25°C unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain ( Miller ) Charge
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
BVDSS
∆BV/∆T
J
VGS(th)
RDS(on)
IGSS
IDSS
V
V/
°C
V
nA
µA
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
VGS=0V,ID=250µA
ID=250µA
See Fig 7
VDS=5V,ID=250µA
VGS=20V
VGS=-20V
VDS=100V
VDS=80V,TC=125°C
VGS=5V,ID=2.35A
(4)
VDS=40V,ID=2.35A
(4)
VDD=50V,ID=5.6A,
RG=12Ω
See Fig 13
(4) (5)
VDS=80V,VGS=5V,
ID=5.6A
See Fig 6 & Fig 12 (4) (5)
Drain-to-Source Leakage Current
VGS=0V,VDS=25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
(1)
Diode Forward Voltage
(4)
Reverse Recovery Time
Reverse Recovery Charge
IS
ISM
VSD
trr
Qrr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
--
--
A
V
ns
µC
Integral reverse pn-diode
in the MOSFET
TJ=25°C,IS=4.7A,VGS=0V
TJ=25°C,IF=5.6A
diF/dt=100A/µs
(4)


Html Pages

1  2  3  4  5  6  7  8  9 


Datasheet Download



Related Electronics Part Number

Part NumberComponents DescriptionHtml ViewManufacturer
IRLR130AAdvanced Power MOSFET 1 2 3 4 5 MoreFairchild Semiconductor
IRFR310AAdvanced Power MOSFET 1 2 3 4 5 MoreFairchild Semiconductor
IRFW644AAdvanced Power MOSFET 1 2 3 4 5 MoreFairchild Semiconductor
SFR9220Advanced Power MOSFET 1 2 3 4 5 MoreFairchild Semiconductor
IRLR230AAdvanced Power MOSFET 1 2 3 4 5 MoreFairchild Semiconductor
SFR2955Advanced Power MOSFET 1 2 3 4 5 MoreFairchild Semiconductor
SSI2N80AAdvanced Power MOSFET 1 2 3 4 5 MoreFairchild Semiconductor
NTD4815NHPower MOSFET 30 V 35 A Single N-Channel DPAK/IPAK 1 2 3 4 5 MoreON Semiconductor
NTGD3133PPower MOSFET −20 V −2.5 A P−Channel TSOP−6 Dual 1 2 3 4 5 ON Semiconductor
IRFP150VPBFHEXFET Power MOSFET 1 2 3 4 5 MoreInternational Rectifier

Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Alldatasheet API   |   Link Exchange   |   Manufacturer List
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn