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IRLR110A Datasheet(PDF) 3 Page - Fairchild Semiconductor

Part No. IRLR110A
Description  Advanced Power MOSFET
Download  9 Pages
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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IRLR110A Datasheet(HTML) 3 Page - Fairchild Semiconductor

   
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IRLR/U110A
10
-1
10
0
10
1
10
-1
10
0
10
1
@ Notes :
1. 250
µs Pulse Test
2. T
C
= 25
oC
V
GS
Top :
7.0V
6.0V
5.5V
5.0V
4.5V
4.0V
3.5V
Bottom :
3.0V
V
DS
, Drain-Source Voltage [V]
0
5
10
15
20
0.0
0.2
0.4
0.6
0.8
@ Note : T
J
= 25
oC
V
GS
= 10 V
V
GS
= 5 V
I
D
, Drain Current [A]
0
246
0
2
4
6
V
DS
= 80 V
V
DS
= 50 V
V
DS
= 20 V
@ Notes : I
D
= 5.6 A
Q
G
, Total Gate Charge [nC]
02468
10
10
-1
10
0
10
1
25
oC
150
oC
- 55
oC
@ Notes :
1. V
GS
= 0 V
2. V
DS
= 40 V
3. 250
µs Pulse Test
V
GS
, Gate-Source Voltage [V]
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
10
-1
10
0
10
1
150
oC
25
oC
@ Notes:
1.V
GS = 0 V
2.250
µs PulseTest
V
SD
, Source-Drain Voltage [V]
10
0
10
1
0
70
140
210
280
350
C
iss
= C
gs
+ C
gd
( C
ds
= shorted )
C
oss= Cds+ Cgd
C
rss= Cgd
@ Notes :
1. V
GS = 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
V
DS
, Drain-Source Voltage [V]
3
1&+$11(/
32:(5 026)(7
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
Fig 6. Gate Charge vs. Gate-Source Voltage
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 4. Source-Drain Diode Forward Voltage
Fig 3. On-Resistance vs. Drain Current


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