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IRLR110A Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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IRLR110A Datasheet(HTML) 3 Page - Fairchild Semiconductor |
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IRLR/U110A 10 -1 10 0 10 1 10 -1 10 0 10 1 @ Notes : 1. 250 µs Pulse Test 2. T C = 25 oC V GS Top : 7.0V 6.0V 5.5V 5.0V 4.5V 4.0V 3.5V Bottom : 3.0V V DS , Drain-Source Voltage [V] 0 5 10 15 20 0.0 0.2 0.4 0.6 0.8 @ Note : T J = 25 oC V GS = 10 V V GS = 5 V I D , Drain Current [A] 0 246 0 2 4 6 V DS = 80 V V DS = 50 V V DS = 20 V @ Notes : I D = 5.6 A Q G , Total Gate Charge [nC] 02468 10 10 -1 10 0 10 1 25 oC 150 oC - 55 oC @ Notes : 1. V GS = 0 V 2. V DS = 40 V 3. 250 µs Pulse Test V GS , Gate-Source Voltage [V] 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 10 -1 10 0 10 1 150 oC 25 oC @ Notes: 1.V GS = 0 V 2.250 µs PulseTest V SD , Source-Drain Voltage [V] 10 0 10 1 0 70 140 210 280 350 C iss = C gs + C gd ( C ds = shorted ) C oss= Cds+ Cgd C rss= Cgd @ Notes : 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS , Drain-Source Voltage [V] 3 1&+$11(/ 32:(5 026)(7 Fig 1. Output Characteristics Fig 2. Transfer Characteristics Fig 6. Gate Charge vs. Gate-Source Voltage Fig 5. Capacitance vs. Drain-Source Voltage Fig 4. Source-Drain Diode Forward Voltage Fig 3. On-Resistance vs. Drain Current |
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