© 2004 IXYS All rights reserved

High Voltage IGBT

V

CES

= 1200 V

I

C25

=

50 A

V

CE(sat)

=

3.5 V

t

fi(typ)

=

160 ns

IXGH 28N120B

IXGT 28N120B

C (TAB)

G = Gate,

C = Collector,

E = Emitter,

TAB = Collector

G

C

E

TO-247 AD

(IXGH)

Features

High Voltage IGBT for resonant

power supplies

- Induction heating

- Rice cookers

International standard packages

JEDEC TO-268 and

JEDEC TO-247 AD

Low switching losses, low V

(sat)

MOS Gate turn-on

- drive simplicity

Advantages

High power density

Suitable for surface mounting

Easy to mount with 1 screw,

(isolated mounting screw hole)

DS98987E(04/04)

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

BV

CES

I

C

= 250

µA , V

1200

V

V

GE(th)

I

C

= 250

µA, V

2.5

5

V

I

CES

V

T

25

°C25

µA

I

GES

V

±100

nA

V

CE(sat)

I

C

= 28A, V

2.8

3.5

V

T

2.75

V

Symbol

Test Conditions

Maximum Ratings

V

CES

T

1200

V

V

CGR

T

1200

V

V

GES

Continuous

±20

V

V

GEM

Transient

±30

V

I

C25

T

A

I

C110

T

A

I

CM

T

150

A

SSOA

V

I

A

(RBSOA)

Clamped inductive load

@ 0.8 V

CES

P

C

T

250

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

Maximum Lead temperature for soldering

300

°C

1.6 mm (0.062 in.) from case for 10 s

Maximum Tab temperature for soldering SMD devices for 10 s

260

°C

M

d

Mounting torque (M3)

(TO-247)

1.13/10Nm/lb.in.

Weight

TO-247 AD

6

g

TO-268

4

g

TO-268 (IXGT)

G

E

C (TAB)