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IRFW644A Datasheet(PDF) 3 Page - Fairchild Semiconductor

Part No. IRFW644A
Description  Advanced Power MOSFET
Download  7 Pages
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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IRFW644A Datasheet(HTML) 3 Page - Fairchild Semiconductor

   
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IRFW/I644A
10
-1
10
0
10
1
10
-1
10
0
10
1
@ Notes :
1. 250
µs Pulse Test
2. T
C = 25
oC
V
GS
Top :
15V
10 V
8.0 V
7.0 V
6.0 V
5.5V
5.0 V
Bottom : 4.5V
V
DS
, Drain-Source Voltage [V]
24
68
10
10
-1
10
0
10
1
25
oC
150
oC
- 55
oC
@ Notes :
1. V
GS = 0 V
2. V
DS
= 40 V
3. 250
µs Pulse Test
V
GS
, Gate-Source Voltage [V]
0
15
304560
0.0
0.2
0.4
0.6
0.8
@ Note : T
J = 25
oC
V
GS = 20 V
V
GS = 10 V
I
D
, Drain Current [A]
0.20.40.60.81.01.21.41.61.8
10
-1
10
0
10
1
150
oC
25
oC
@ Notes :
1. V
GS = 0 V
2. 250
µsPulse Test
V
SD , Source-Drain Voltage
[V]
10
0
10
1
0
500
1000
1500
2000
C
iss= Cgs+ Cgd ( Cds= shorted )
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
@ Notes :
1. V
GS = 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
V
DS
, Drain-Source Voltage [V]
0
1020
3040
50
0
5
10
V
DS = 200 V
V
DS = 125 V
V
DS = 50 V
@ Notes : I
D
= 14.0 A
Q
G
, Total Gate Charge [nC]
1&+$11(/
32:(5 026)(7
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
Fig 6. Gate Charge vs. Gate-Source Voltage
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 4. Source-Drain Diode Forward Voltage
Fig 3. On-Resistance vs. Drain Current


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