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ILD1 Datasheet(PDF) 3 Page - Vishay Siliconix

Part No. ILD1
Description  Optocoupler, Phototransistor Output (Dual, Quad Channel)
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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ILD1 Datasheet(HTML) 3 Page - Vishay Siliconix

   
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ILD1/ 2/ 5 / ILQ1/ 2/ 5
Document Number 83646
Rev. 1.4, 05-Nov-04
Vishay Semiconductors
www.vishay.com
3
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Output
Coupler
Current Transfer Ratio
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward voltage
IF = 60 mA
VF
1.25
1.65
V
Reverse current
VR = 6.0 V
IR
0.01
10
µA
Capacitance
VR = 0 V, f = 1.0 MHz
CO
25
pF
Thermal resistance, junction to
lead
TthJL
750
K/W
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Collector-emitter capacitance
VCE = 5.0 V, f = 1.0 MHz
CCE
6.8
pF
Collector-emitter leakage
current
VVCE = 10 V
ICEO
5.0
50
nA
Saturation voltage, collector-
emitter
ICE = 1.0 mA, IB = 20 µAVCESAT
0.25
0.4
V
DC forward current gain
VCE = 10 V, IB = 20 µA
HFE
200
650
1800
DC forward current gain
saturated
VCE = 0.4 V, IB = 20 µAHFEsat
120
400
600
Thermal resistance, junction to
lead
Rthjl
500
K/W
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Capacitance (input-output)
VIO = 0 V, f = 1.0 MHz
CIO
0.8
pF
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
Current Transfer Ratio
(collector-emitter saturated)
IF = 10 mA, VCE = 0.4 V
ILD1
ILQ1
CTRCEsat
75
%
ILD2
ILQ2
CTRCEsat
170
%
ILD5
ILQ5
CTRCEsat
100
%
Current Transfer Ratio
(collector-emitter)
IF = 10 mA, VCE = 10 V
ILD1
ILQ1
CTRCE
20
80
300
%
ILD2
ILQ2
CTRCE
100
200
500
%
ILD5
ILQ5
CTRCE
50
130
400
%


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