 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
ILD1 Datasheet(PDF) 2 Page - Vishay Siliconix |
|
||||||||||||||||||||||||||||||
ILD1 Datasheet(HTML) 2 Page - Vishay Siliconix |
|
|
2 / 9 page 
www.vishay.com 2 Document Number 83646 Rev. 1.4, 05-Nov-04 ILD1/ 2/ 5 / ILQ1/ 2/ 5 Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Output Coupler Parameter Test condition Symbol Value Unit Reverse voltage VR 6.0 V Forward current IF 60 mA Surge current IFSM 2.5 A Power dissipation Pdiss 100 mW Derate linearly from 25 °C 1.3 mW/°C Parameter Test condition Part Symbol Value Unit Collector-emitter reverse voltage ILD1 VCER 50 V ILQ1 VCER 50 V ILD2 VCER 70 V ILQ2 VCER 70 V ILD5 VCER 70 V ILQ5 VCER 70 V Collector current IC 50 mA t < 1.0 ms IC 400 mA Power dissipation Pdiss 200 mW Derate linearly from 25 °C 2.6 mW/°C Parameter Test condition Symbol Value Unit Isolation test voltage (between emitter and detector referred to standard climate 25 °C/ 50 % RH, DIN 50014) VISO 5300 VRMS Creepage ≥ 7.0 mm Clearance ≥ 7.0 mm Isolation resistance VIO = 500 V, Tamb = 25 °C RIO 1012 Ω VIO = 500 V, Tamb = 100 °C RIO 1011 Ω Package power dissipation Ptot 250 mW Derate linearly from 25 °C 3.3 mW/°C Storage temperature Tstg - 40 to + 150 °C Operating temperature Tamb - 40 to + 100 °C Junction temperature Tj 100 °C Soldering temperature 2.0 mm from case bottom Tsld 260 °C |
English ▼
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
