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BSS50 Datasheet(PDF) 4 Page - NXP Semiconductors

Part No. BSS50
Description  NPN Darlington transistors
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BSS50 Datasheet(HTML) 4 Page - NXP Semiconductors

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1997 Sep 03
4
Philips Semiconductors
Product specification
NPN Darlington transistors
BSS50; BSS51; BSS52
CHARACTERISTICS
Tj =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
ICES
collector cut-off current
BSS50
VBE = 0; VCE =45V
−−
50
nA
BSS51
VBE = 0; VCE =60V
−−
50
nA
BSS52
VBE = 0; VCE =80V
−−
50
nA
IEBO
emitter cut-off current
IC = 0; VEB =4V
−−
50
nA
hFE
DC current gain
VCE =10V
IC = 150 mA
1000
−−
IC = 500 mA
2000
−−
VCEsat
collector-emitter saturation voltage IC = 500 mA; IB = 0.5 mA
−−
1.3
V
IC = 500 mA; IB = 0.5 mA; Tj = 200 °C
−−
1.3
V
VCEsat
collector-emitter saturation voltage
BSS51
IC = 1 A; IB =1mA
−−
1.6
V
IC = 1 A; IB = 1 mA; Tj = 200 °C
−−
2.3
V
VCEsat
collector-emitter saturation voltage
BSS50; BSS52
IC = 1 A; IB =4mA
−−
1.6
V
IC = 1 A; IB = 4 mA; Tj = 200 °C
−−
1.6
V
VBEsat
base-emitter saturation voltage
IC = 500 mA; IB = 0.5 mA
−−
1.9
V
VBEsat
base-emitter saturation voltage
BSS51
IC = 1 A; IB =1mA
−−
2.2
V
BSS50; BSS52
IC = 1 A; IB =4mA
−−
2.2
V
VBEon
base-emitter on-state voltage
IC = 150 mA; VCE = 10 V
1.3
1.65
V
IC = 500 mA; VCE = 10 V
1.4
1.75
V
fT
transition frequency
IC = 500 mA; VCE = 5 V; f = 100 MHz
200
MHz
Switching times (between 10% and 90% levels)
ton
turn-on time
ICon = 500 mA; IBon = 0.5 mA;
IBoff = −0.5 mA
0.5
−µs
ICon = 1 A; IBon = 1 mA; IBoff = −1mA
0.4
−µs
toff
turn-off time
ICon = 500 mA; IBon = 0.5 mA;
IBoff = −0.5 mA
1.3
−µs
ICon = 1 A; IBon = 1 mA; IBoff = −1mA
1.5
−µs


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