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BSS50 Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. BSS50
Description  NPN Darlington transistors
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BSS50 Datasheet(HTML) 2 Page - NXP Semiconductors

  BSS50 Datasheet HTML 1Page - NXP Semiconductors BSS50 Datasheet HTML 2Page - NXP Semiconductors BSS50 Datasheet HTML 3Page - NXP Semiconductors BSS50 Datasheet HTML 4Page - NXP Semiconductors BSS50 Datasheet HTML 5Page - NXP Semiconductors BSS50 Datasheet HTML 6Page - NXP Semiconductors BSS50 Datasheet HTML 7Page - NXP Semiconductors BSS50 Datasheet HTML 8Page - NXP Semiconductors  
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1997 Sep 03
2
Philips Semiconductors
Product specification
NPN Darlington transistors
BSS50; BSS51; BSS52
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V)
• Integrated diode and resistor.
APPLICATIONS
• Industrial high gain amplification.
DESCRIPTION
NPN Darlington transistor in a TO-39 metal package.
PNP complements: BSS61 and BSS62.
PINNING
PIN
DESCRIPTION
1
emitter
2
base
3
collector, connected to case
Fig.1 Simplified outline (TO-39) and symbol.
handbook, halfpage
MAM311
2
3
1
1
2
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
BSS50
−−
60
V
BSS51
−−
80
V
BSS52
−−
90
V
VCES
collector-emitter voltage
VBE =0
BSS50
−−
45
V
BSS51
−−
60
V
BSS52
−−
80
V
IC
collector current
−−
1A
Ptot
total power dissipation
Tamb ≤ 25 °C
−−
0.8
W
Tcase ≤ 25 °C
−−
5W
hFE
DC current gain
IC = 500 mA; VCE =10V
2000
−−
fT
transition frequency
IC = 500 mA; VCE = 5 V; f = 100 MHz −
200
MHz


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