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BGY284 Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. BGY284
Description  Power amplifier with integrated control loop for GSM850, EGSM900, DCS1800 & PCS1900
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BGY284 Datasheet(HTML) 2 Page - NXP Semiconductors

 
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2003 Aug 20
2
Philips Semiconductors
Preliminary specification
power amplifier with integrated control loop for
GSM850, EGSM900, DCS1800 & PCS1900
BGY284
FEATURES
• Quad band GSM amplifier
• Very small size (8 x 8 mm).
• Suited for GPRS class 12 (duty cycle 4 : 8)
• Integrated power control loop
• 3.5 V nominal supply voltage
• 35 dBm controlled output power for GSM850/EGSM900
• 32.5 dBm controlled output power for DCS1800/PCS1900
• Easy on/off and band select by digital control voltage
• Internal input and output matching
• Specification based on 3GPP TS 45.005.
APPLICATIONS
• Digital cellular radio systems with Time Division Multiple Access (TDMA) operation (GSM systems) in four frequency
bands: 824 to 849 MHz, 880 to 915 MHz, 1710 to 1785 MHz and 1850 to 1910 MHz.
DESCRIPTION
The BGY284 is a power amplifier module in a SOT775 surface mounted package with a plastic cap.
The module consists of two separated line-ups, one for low band (LB,GSM850/EGSM900) and one for high band
(HB, DCS1800/PCS1900) with internal power detection function, power control loop, input and output matching.
See the simplified internal circuit on page 4.
The power control circuit ensures a stable power output set by the level of VDAC and stabilised to compensate variations
of supply voltage, input power and temperature, with a control range fully compliant with ETSI time mask and power
spectrum requirements
QUICK REFERENCE DATA
RF performance at Tmb =25 °C (mounting base temperature); VBAT =3.5 V; VSTAB = 2.8 V; ZS =ZL =50 Ω;
PD =0 dBm; δ =2:8
MODE OF OPERATION
f
(MHz)
PL
(dBm)
η
(%)
Typical pulsed, controlled output power
824 to 849
34
50
880 to 915
34
50
1710 to 1785
31.3
45
1850 to 1910
31.3
45


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