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2N7002S Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers

Part No. 2N7002S
Description  SURFACE MOUNT Dual N-Channel Enhancement MOS FET / VOLTAGE 60 Volts CURRENT 0.250 Ampere
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2N7002S Datasheet(HTML) 2 Page - List of Unclassifed Manufacturers

   
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RATING CHARACTERISTIC CURVES ( 2N7002S )
Electrical Characteristics T
A = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 10 µA
60
70
V
IDSS
Zero Gate Voltage Drain Current
VDS = 60 V, VGS = 0 V
1
µA
TC=125°C
0.5
mA
IGSSF
Gate - Body Leakage, Forward
VGS = 15 V, VDS = 0 V
10
nA
IGSSR
Gate - Body Leakage, Reverse
VGS = -15 V, VDS = 0 V
-10
nA
ON CHARACTERISTICS (Note 1)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
1
2.0
2.5
V
RDS(ON)
Static Drain-Source On-Resistance
VGS = 10 V, ID = 250 mA
1.7
3.0
VGS = 4.0 V, ID = 100 mA
2.5
4.0
VDS(ON)
Drain-Source On-Voltage
V
VGS = 10 V, ID = 500mA
0.6
3.75
VGS = 5.0 V, ID = 50 mA
0.09
1.5
ID(ON)
On-State Drain Current
mA
VGS = 10 V, VDS = 7.5VDS(on)
800
1300
VGS = 4.5V, VDS = 10VDS(on)
500
700
gFS
Forward Transconductance
mS
VDS = 15 V DS(on), ID = 200 m A
250
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
25
50
Coss
Output Capacitance
6
25
pF
Crss
Reverse Transfer Capacitance
1.2
6
3
5
Qg
Total Gate Charge
VDS
D
= 30 V, VGS = 10 V,
I = 250 mA
0.6
1.0
Qgs
Gate-Source Charge
0.06
25
nC
Qgd
Gate-Drain Charge
0.06
5
ton
Turn-On Time
nS
VDD = 30 V, RL = 200
,
ID = 100 mA, VGS = 10 V,
RGEN = 10
20
toff
tr
tf
Turn-Off Time
nS
VDD = 30 V, RL = 200
,
ID = 100 mA, VGS = 10 V,
RGEN = 10
20
7.5
7.5
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
115
mA
ISM
Maximum Pulsed Drain-Source Diode Forward Current
0.8
A
VSD
Drain-Source Diode Forward
Voltage
VGS = 0 V, IS = 200 mA (Note 1)
0.85
1.2
V
Note:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.


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