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2N6251 Datasheet(PDF) 3 Page - Motorola, Inc

Part No. 2N6251
Description  High Voltage NPN Silicon Power Transistors
Download  6 Pages
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Maker  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
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2N6251 Datasheet(HTML) 3 Page - Motorola, Inc

   
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2N6251
3–106
Motorola Bipolar Power Transistor Device Data
INDUCTIVE TEST CIRCUIT
1
2
Rcoil
Lcoil
VCC
0.1
1N4937
TUT
Table 1. Test Conditions for Dynamic Performance
VCEO(sus)
VCER(sus)
RESISTIVE SWITCHING
Lcoil = 42 mH
Rcoil = 0.7 Ω, fo = 60 Hz
VCC = 0 to 50 V
Lcoil = 14 mH
Rcoil = 0.05 Ω
VCC = 0 to 50 V
fo = 60 Hz
VCC = 200 V
RL = 20 Ω
t1 Adjusted to
Obtain IC
t1 [
Lcoil (ICpk)
VCC
RESISTIVE TEST CIRCUIT
OUTPUT WAVEFORMS
39
+6.0 V
0
1
2
51
ES/b
4 V
IB1 = 2.0 A
+10 V
Lcoil = 50 µH, VCC = 11.5 V
Rcoil = 0.2 Ω
IC = 10 A
PW
≈ 100 µs
tr ≤ 5 ns
tf ≤ 50 ns
DUTY CYCLE
≤ 2%
+ 15 V
TIP41B
0.02
µF
50
µF
0
+6.0 V
39
1
2
0
1
2
50
50
51
51
4.7
1
2
RS
VCL
IC(pk)
t
t1
tf
t
IC
VCE
NOTE: SET IC(pk) TO OBTAIN IC = 200 mA AT VCEO(sus) EQUAL TO RATED VALUE.
NOTE: ADJUST VClamp VOLTAGE FOR VCEO(sus) RATED VALUE.
+ 200 V
DC
CURRENT
PROBE
TUT
3
25
– 6.0 V
1
2
20
Figure 2. Thermal Response
t, TIME (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1.0 k
500
Z
θJC(t) = r(t) RθJC
R
θJC = 1.0°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) Z
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
300
30
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
20
10
5.0
3.0
1.0
0.5
0.3
0.05
5.0 7.0 10
20
30
70
TC = 25°C UNLESS NOTED
BONDING WIRE LIMIT
THERMAL LIMIT, SINGLE PULSE
SECOND BREAKDOWN LIMIT
50
0.2
0.1
TC = 25°C
TC = 100°C
dc
20
µs
500
µs
10 ms ms
50 ms
1.0
Figure 3. Active–Region Safe Operating Area
2.0
0.03
100
200
500
100
µs
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 3 is based on TC = 25_C. TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC w 25_C. Second breakdown limitations do not
derate the same as thermal limitations. Allowable current at
the voltage shown on Figure 3 may be found at any case
temperature by using the appropriate curve on Figure 1.
TJ(pk) may be calculated from the data in Figure 2. At high
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations
imposed by second breakdown.


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