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2MBI300UD-120 Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers

Part No. 2MBI300UD-120
Description  1200V / 300A 2 in one-package IGBT Module U-Series
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Maker  ETC1 [List of Unclassifed Manufacturers]
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2MBI300UD-120 Datasheet(HTML) 2 Page - List of Unclassifed Manufacturers

   
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2MBI300UD-120
IGBT Module
Characteristics (Representative)
VGE=0V, f= 1M Hz, Tj= 25°C
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Vcc=600V, Ic=300A, Tj= 25°C
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C / chip
Capacitance vs. Collector-Emitter voltage (typ.)
Dynamic Gate charge (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
Tj=25°C / chip
0
100
200
300
400
500
600
700
800
012
34
5
Collector-Emitter voltage : VCE [V]
VGE=20V
15V
12V
10V
8V
0
100
200
300
400
500
600
700
800
01
2
345
Collector-Emitter voltage : VCE [V]
VGE=20V 15V
12V
10V
8V
0
100
200
300
400
500
600
700
800
01
23
4
Collector-Emitter voltage : VCE [V]
Tj=125°C
Tj=25°C
0
2
4
6
8
10
5
101520
25
Gate - Emitter voltage : VGE [ V ]
Ic=600A
Ic=300A
Ic=150A
0.1
1.0
10.0
100.0
010
20
30
Collector-Emitter voltage : VCE [V]
Cies
Coes
Cres
0
300
600
900
1200
1500
1800
Gate charge : Qg [ nC ]
VGE
VCE


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