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IRF3709ZPBF Datasheet(PDF) 1 Page - International Rectifier

Part No. IRF3709ZPBF
Description  HEXFET Power MOSFET
Download  12 Pages
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRF3709ZPBF Datasheet(HTML) 1 Page - International Rectifier

 
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www.irf.com
1
6/30/04
IRF3709ZPbF
IRF3709ZSPbF
IRF3709ZLPbF
HEXFET® Power MOSFET
Notes
 through ‡ are on page 12
Applications
Benefits
l Low RDS(on) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l Lead-Free
PD -95465
VDSS RDS(on) max Qg
30V
6.3m
:
17nC
D2Pak
IRF3709ZS
TO-220AB
IRF3709Z
TO-262
IRF3709ZL
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
c
PD @TC = 25°C
Maximum Power Dissipation
W
PD @TC = 100°C Maximum Power Dissipation
Linear Derating Factor
W/°C
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
i
–––
1.89
°C/W
RθJA
Junction-to-Ambient (PCB Mount)
g
–––
40
300 (1.6mm from case)
-55 to + 175
10 lbf
yin (1.1Nym)
79
0.53
40
Max.
87
h
62
h
350
± 20
30


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