 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
IRF3709ZPBF Datasheet(PDF) 1 Page - International Rectifier |
|
||||||||||||||||||||||||||||||
IRF3709ZPBF Datasheet(HTML) 1 Page - International Rectifier |
|
|
1 / 12 page 
www.irf.com 1 6/30/04 IRF3709ZPbF IRF3709ZSPbF IRF3709ZLPbF HEXFET® Power MOSFET Notes through are on page 12 Applications Benefits l Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free PD -95465 VDSS RDS(on) max Qg 30V 6.3m : 17nC D2Pak IRF3709ZS TO-220AB IRF3709Z TO-262 IRF3709ZL Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TC = 25°C Continuous Drain Current, VGS @ 10V A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current c PD @TC = 25°C Maximum Power Dissipation W PD @TC = 100°C Maximum Power Dissipation Linear Derating Factor W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case i ––– 1.89 °C/W RθJA Junction-to-Ambient (PCB Mount) g ––– 40 300 (1.6mm from case) -55 to + 175 10 lbf yin (1.1Nym) 79 0.53 40 Max. 87 h 62 h 350 ± 20 30 |
English ▼
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
