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1N5807US Datasheet(PDF) 1 Page - Microsemi Corporation

Part No. 1N5807US
Description  SURFACE MOUNT VOIDLESSHERMETICALLY- SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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1N5807US Datasheet(HTML) 1 Page - Microsemi Corporation

   
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SURFACE MOUNT VOIDLESS-
HERMETICALLY-SEALED ULTRA FAST
RECOVERY GLASS RECTIFIERS
SCOTTSD A L E DIVISION
1N5807US thru 1N5811US
DESCRIPTION
APPEARANCE
This “Ultrafast Recovery” surface mount rectifier diode series is military qualified to
MIL-PRF-19500/477 and is ideal for high-reliability applications where a failure
cannot be tolerated. These industry-recognized 6.0 Amp rated rectifiers for working
peak reverse voltages from 50 to 150 volts are hermetically sealed with voidless-
glass construction using an internal “Category I” metallurgical bond. These devices
are also available in axial-leaded package configurations (see separate data sheet
for 1N5807 thru 1N5811). Microsemi also offers numerous other rectifier products
to meet higher and lower current ratings with various recovery time speed
requirements including standard, fast, and ultrafast device types in both through-
hole and surface mount packages.
Package “E”
or D-5B
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Surface mount package series equivalent to the
JEDEC registered 1N5807 to 1N5811 series
Voidless-hermetically-sealed glass package
Extremely robust construction
Triple-layer passivation
Internal “Category I” Metallurgical bonds
JAN, JANTX, JANTXV, and JANS available per MIL-
PRF-19500/477
Axial-leaded equivalents also available (see separate
data sheet for 1N5807 thru 1N5811)
Ultrafast recovery 6 Amp rectifiers series 50 to 150 V
Military and other high-reliability applications
Switching power supplies or other applications
requiring extremely fast switching & low forward loss
High forward surge current capability
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Operating Temperature: -65
oC to +175oC.
Storage Temperature: -65
oC to +175oC.
Average Rectified Forward Current (IO): 6 Amps @
TEC = 75ºC End Cap temperature (see note 1)
• Thermal Resistance: 10 ºC/W junction to end cap
• Thermal Impedance: 1.5 ºC/W @ 10 ms heating time
• Forward Surge Current (8.3 ms half sine) 125 Amps
• Solder temperature: 260ºC for 10 s (maximum)
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
• TERMINALS: End caps are solid Silver with
Tin/Lead (Sn/Pb) finish
MARKING & POLARITY: Cathode band only
Tape & Reel option: Standard per EIA-481-B
Weight: 539 mg
See package dimensions and recommended pad
layout on last page
ELECTRICAL CHARACTERISTICS
TYPE
WORKING
PEAK
REVERSE
VOLTAGE
VRWM
BREAKDOWN
VOLTAGE
(MIN.)
@ 100
µA
VBR
AVERAGE
RECTIFIED
CURRENT
IO1
@TEC=75ºC
(Note 1)
AVERAGE
RECTIFIED
CURRENT
IO2
@TA=55ºC
(Note 2)
MAXIMUM
FORWARD
VOLTAGE
@ 4 A
(8.3 ms pulse)
VF
REVERSE
CURRENT
(MAX)
@ VRWM
IR
SURGE
CURRENT
(MAX)
IFSM
(NOTE 3)
REVERSE
RECOVERY
TIME (MAX)
(NOTE 4)
trr
VOLTS
VOLTS
AMPS
AMPS
VOLTS
µA
AMPS
ns
25
oC
100
oC 25oC 100oC
1N5807US
1N5809US
1N5811US
50
100
150
60
110
160
6.0
6.0
6.0
3.0
3.0
3.0
0.875
0.875
0.875
0.800
0.800
0.800
5
5
5
150
150
150
125
125
125
30
30
30
NOTE 1: Rated at TEC = 75ºC. Derate at 60 mA/ºC for TEC above 75ºC
NOTE 2: Derate linearly at 25 mA/ºC above TA = 55ºC. This rating is typical for PC boards where thermal resistance from mounting point to
ambient is sufficiently controlled where TJ(max) does not exceed 175ºC
NOTE 3: TA = 25
oC @ IO = 3.0 A and VRWM for ten 8.3 ms surges at 1 minute intervals
NOTE 4: IF = 1.0 A, IRM = 1.0 A, IR(REC) = 0.10 A and di/dt = 100 A/µs min
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
 2004
1-14-2005 REV B


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