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© Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet

Rev. 02 — 1 July 2005

7 of 12

Philips Semiconductors

PMF3800SN

N-channel TrenchMOS standard level FET

Fig 9.

Gate-source threshold voltage as a function of

junction temperature

Fig 10. Sub-threshold drain current as a function of

gate-source voltage

Fig 11. Gate-source voltage as a function of gate charge; typical values

03aa34

0

0.6

1.2

1.8

2.4

-60

0

60

120

180

°C)

(V)

typ

min

03aa37

10

-6

10

-5

10

-4

10

-3

10

-2

10

-1

0

0.6

1.2

1.8

2.4

(A)

typ

min

03ab09

0

5

10

15

0

0.3

0.6

0.9

1.2

(V)