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Product data sheet

Rev. 02 — 1 July 2005

6 of 12

Philips Semiconductors

PMF3800SN

N-channel TrenchMOS standard level FET

Fig 5.

Output characteristics: drain current as a

function of drain-source voltage; typical values

Fig 6.

Drain-source on-state resistance as a function

of drain current; typical values

Fig 7.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Fig 8.

Normalized drain-source on-state resistance

factor as a function of junction temperature

03an70

0

0.1

0.2

0.3

0.4

0.5

0

0.5

1

1.5

2

(A)

3.5

4

4.5

3

6

10

03an71

0

2

4

6

8

10

0

0.1

0.2

0.3

0.4

0.5

(

Ω)

4.5

4

10

6

03an72

0

0.1

0.2

0.3

0.4

0.5

02

46

(A)

150

°C

03aa28

0

0.6

1.2

1.8

2.4

-60

0

60

120

180

°C)

a

a

R

DSon

R

DSon 25 C

°

()

------------------------------

=