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PMF3800SN Datasheet(PDF) 6 Page - NXP Semiconductors |
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PMF3800SN Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 12 page 9397 750 15218 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 1 July 2005 6 of 12 Philips Semiconductors PMF3800SN N-channel TrenchMOS standard level FET Tj =25 °CTj =25 °C Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6. Drain-source on-state resistance as a function of drain current; typical values Tj =25 °C and 150 °C; VDS >ID × RDSon Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature 03an70 0 0.1 0.2 0.3 0.4 0.5 0 0.5 1 1.5 2 VDS (V) ID (A) 3.5 Tj = 25 °C VGS (V) = 4 4.5 3 6 10 03an71 0 2 4 6 8 10 0 0.1 0.2 0.3 0.4 0.5 ID (A) RDSon ( Ω) VGS (V) = 3.5 Tj = 25 °C 4.5 4 10 6 03an72 0 0.1 0.2 0.3 0.4 0.5 02 46 VGS (V) ID (A) VDS > ID x RDSon Tj = 25 °C 150 °C 03aa28 0 0.6 1.2 1.8 2.4 -60 0 60 120 180 Tj ( °C) a a R DSon R DSon 25 C ° () ------------------------------ = |
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