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2SC2335 Datasheet(PDF) 1 Page - NEC

Part No. 2SC2335
Description  NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING
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Maker  NEC [NEC]
Homepage  http://www.nec.com/
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2SC2335 Datasheet(HTML) 1 Page - NEC

   
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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1998
©
Document No. D14861EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SC2335
NPN SILICON TRIPLE DIFFUSED TRANSISTOR
FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING
DATA SHEET
2002
The 2SC2335 is a mold power transistor developed for high-speed
high-voltage switching, and is ideal for use as a driver in devices such
as switching regulators, DC/DC converters, and high-frequency power
amplifiers.
FEATURES
• Low collector saturation voltage: VCE(sat) = 1.0 V MAX. @IC = 3.0 A
• Fast switching speed: tf = 1.0
µs MAX. @IC = 3.0 A
• Wide base reverse-bias SOA: VCEX(SUS)1 = 450 V MIN. @IC = 3.0 A
ABSOLUTE MAXIMUM RATINGS (TA = 25
°°°°C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
VCBO
500
V
Collector to emitter voltage
VCEO
400
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
7.0
A
Collector current (pulse)
IC(pulse)
PW
≤ 300
µs,
duty cycle
≤ 10%
15
A
Base current (DC)
IB(DC)
3.5
A
TC = 25
°C
40
W
Total power dissipation
PT
TA = 25
°C
1.5
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
ORDERING INFORMATION
Part No.
Package
2SC2335
TO-220AB
(TO-220AB)


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