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2SC2335 Datasheet(PDF) 2 Page - NEC

Part No. 2SC2335
Description  NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING
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Maker  NEC [NEC]
Homepage  http://www.nec.com/
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2SC2335 Datasheet(HTML) 2 Page - NEC

   
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Data Sheet D14861EJ2V0DS
2
2SC2335
ELECTRICAL CHARACTERISTICS (TA = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to emitter voltage
VCEO(SUS)
IC = 3.0 A, IB1 = 0.6 A, L = 1 mH
400
V
Collector to emitter voltage
VCEX(SUS)1
IC = 3.0 A, IB1 =
−IB2 = 0.6 A,
VBE(OFF) =
−5.0 V, L = 180
µH, clamped
450
V
Collector to emitter voltage
VCEX(SUS)2
IC = 6.0 A, IB1 = 2.0 A,
−IB2 = 0.6 A,
VBE(OFF) =
−5.0 V, L = 180
µH, clamped
400
V
Collector cutoff current
ICBO
VCB = 400 V, IE = 0 A
10
µA
Collector cutoff current
ICER
VCE = 400 V, RBE = 51
Ω, TA = 125°C
1.0
mA
Collector cutoff current
ICEX1
VCE = 400 V, VBE(OFF) =
−1.5 V
10
µA
Collector cutoff current
ICEX2
VCE = 400 V, VBE(OFF) =
−1.5 V,
TA = 125
°C
1.0
mA
Emitter cutoff current
IEBO
VEB = 5.0 V, IC = 0 A
10
µA
DC current gain
hFE1
VCE = 5.0 V, IC = 0.1 A
Note
20
80
DC current gain
hFE2
VCE = 5.0 V, IC = 1.0 A
Note
20
80
DC current gain
hFE3
VCE = 5.0 V, IC = 3.0 A
Note
10
Collector saturation voltage
VCE(sat)
IC = 3.0 A, IB = 0.6 A
Note
1.0
V
Base saturation voltage
VBE(sat)
IC = 3.0 A, IB = 0.6 A
Note
1.2
V
Turn-on time
ton
1.0
µs
Storage time
tstg
2.5
µs
Fall time
tf
IC = 3.0 A, RL = 50
Ω,
IB1 =
−IB2 = 0.6 A, VCC ≅ 150 V
Refer to the test circuit.
1.0
µs
Note Pulse test PW
≤ 350
µs, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
hFE2
20 to 40
30 to 60
40 to 80
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
Base current
waveform
Collector current
waveform


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