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BUK7107-40ATC Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. BUK7107-40ATC
Description  TrenchPLUS standard level FET
Download  16 Pages
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BUK7107-40ATC Datasheet(HTML) 2 Page - NXP Semiconductors

 
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Philips Semiconductors
BUK71/7907-40ATC
TrenchPLUS standard level FET
Product data
Rev. 01 — 9 August 2002
2 of 16
9397 750 09874
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
3.
Limiting values
[1]
Voltage is limited by clamping
[2]
Current is limited by power dissipation chip rating
[3]
Continuous current is limited by package.
Table 2:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
[1]
-40
V
VDGS
drain-gate voltage (DC)
IDG = 250 µA
[1]
-40
V
VGS
gate-source voltage (DC)
-
±20
V
ID
drain current (DC)
Tmb =25 °C; VGS =10V;
Figure 2 and 3
[2]
-
140
A
[3]
-75
A
Tmb = 100 °C; VGS =10V; Figure 2
[3]
-75
A
IDM
peak drain current
Tmb =25 °C; pulsed; tp ≤ 10 µs;
Figure 3
-
560
A
Ptot
total power dissipation
Tmb =25 °C; Figure 1
-
272
W
IDG(CL)
drain-gate clamping current
tp = 5 ms; δ = 0.01
-
50
mA
IGS(CL)
gate-source clamping current
continuous
-
10
mA
tp = 5 ms; δ = 0.01
-
50
mA
Visol(FET-TSD) FET to temperature sense diode
isolation voltage
-
±100
V
Tstg
storage temperature
−55
+175
°C
Tj
junction temperature
−55
+175
°C
Source-drain diode
IDR
reverse drain current
Tmb =25 °C
[2]
-
140
A
[3]
-75
A
IDRM
peak reverse drain current
Tmb =25 °C; pulsed; tp ≤ 10 µs
-
560
A
Clamping
EDS(CL)S
non-repetitive drain-source clamping
energy
unclamped inductive load; ID =75A;
VDS ≤ 40 V; VGS =10V; RGS =10kΩ;
starting Tj =25 °C
-
1.4
J
Electrostatic Discharge
Vesd
electrostatic discharge voltage; pins
1,3,5
Human Body Model; C = 100 pF;
R = 1.5 k
6kV


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