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BUK7107-40ATC Datasheet(PDF) 5 Page - NXP Semiconductors

Part No. BUK7107-40ATC
Description  TrenchPLUS standard level FET
Download  16 Pages
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BUK7107-40ATC Datasheet(HTML) 5 Page - NXP Semiconductors

 
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Philips Semiconductors
BUK71/7907-40ATC
TrenchPLUS standard level FET
Product data
Rev. 01 — 9 August 2002
5 of 16
9397 750 09874
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5.
Characteristics
Table 4:
Characteristics
Tj =25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DG
drain-gate zener breakdown
voltage
ID = 0.25 mA; VGS =0V
Tj = 25°C40
-
-
V
Tj = −55 °C40
-
-
V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS =VGS;
Figure 9
Tj = 25°C2
3
4
V
Tj = 175 °C1
-
-
V
Tj = −55 °C
-
-
4.4
V
IDSS
drain-source leakage current
VDS = 40 V; VGS =0V
Tj = 25°C
-
0.1
10
µA
Tj = 175 °C
-
-
250
µA
V(BR)GSS
gate-source breakdown
voltage
IG = ±1 mA;
−55°C<Tj <175 °C
20
22
-
V
IGSS
gate-source leakage current
VGS = ±10 V; VDS =0V
Tj =25 °C
-
5
1000
nA
Tj = 175 °C-
-
10
µA
RDSon
drain-source on-state
resistance
VGS =10V; ID =50A;
Figure 7 and 8
Tj = 25°C
-
5.8
7
m
Tj = 175 °C-
-
14
m
VF
temperature sense diode
forward voltage
IF = 250 µA
648
658
668
mV
SF
temperature sense diode
temperature coefficient
IF = 250 µA;
−55°C<Tj <175 °C
−1.4
−1.54
−1.68
mV/K
Vhys
temperature sense diode
forward voltage hysteresis
125
µA<IF < 250 µA
253250mV
Dynamic characteristics
Qg(tot)
total gate charge
VGS =10V; VDS =32V;
ID =25A; Figure 14
-
108
-
nC
Qgs
gate-source charge
-
21
-
nC
Qgd
gate-to-drain (Miller) charge
-
42
-
nC
Ciss
input capacitance
VGS =0V; VDS =25V;
f = 1 MHz; Figure 12
-
4500
-
pF
Coss
output capacitance
-
960
-
pF
Crss
reverse transfer capacitance
-
510
-
pF
td(on)
turn-on delay time
VDD = 30 V; RL = 1.2 Ω;
VGS =10V; RG =1kΩ
-2
-
µs
tr
rise time
-
5.7
-
µs
td(off)
turn-off delay time
-
8.9
-
µs
tf
fall time
-
6.8
-
µs


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