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BUL310PI Datasheet(PDF) 1 Page - STMicroelectronics

Part No. BUL310PI
Description  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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BUL310PI Datasheet(HTML) 1 Page - STMicroelectronics

   
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BUL310
BUL310PI
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTORS
s
SGS-THOMSON PREFERRED SALESTYPES
s
NPN TRANSISTOR
s
HIGH VOLTAGE CAPABILITY
s
LOW SPREAD OF DYNAMIC PARAMETERS
s
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s
VERY HIGH SWITCHING SPEED
s
FULLY CHARACTERISED AT 125
oC
s
LARGE RBSOA
s
U.L. RECOGNISED ISOWATT220 PACKAGE
(U.L. FILE # E81734 (N)):
ISOLATION VOLTAGE 1500VRMS
APPLICATIONS
s
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
s
FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The BUL310 and BUL310PI are manufactured
using
high
voltage
Multi
Epitaxial
Planar
technology for high switching speeds and high
voltage capability. They use a Cellular Emitter
structure with planar edge termination to enhance
switching speeds while maintaining a
wide
RBSOA.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
INTERNAL SCHEMATIC DIAGRAM
September 1997
1
2
3
TO-220
ISOWATT220
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Uni t
BUL 310
BUL310PI
VCES
Collector-Emit ter Voltage (VBE = 0)
1000
V
VCEO
Collector-Emit ter Voltage (IB = 0)
500
V
VEBO
Emitter-Base Voltage (IC =0)
9
V
IC
Collector Current
5
V
ICM
Collector Peak Current (tp <5 ms)
10
A
IB
Base Current
3
A
IBM
Base Peak Current (tp <5 ms)
4
A
Ptot
Tot al Dissipation at T c = 25
oC75
35
W
Tstg
Storage Temperature
-65 to 150
oC
Tj
Max. O perat ing Junction Temperature
150
oC
1/7


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