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NUS3045MNT1G Datasheet(PDF) 5 Page - ON Semiconductor

Part # NUS3045MNT1G
Description  Overvoltage Protection IC with Integrated MOSFET
Download  12 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NUS3045MNT1G Datasheet(HTML) 5 Page - ON Semiconductor

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NUS2045MN, NUS3045MN
http://onsemi.com
5
P−CHANNEL MOSFET
Parameter
Symbol
Min
Typ
Max
Units
Drain to Source On Resistance
VGS = −4.5 V, ID = 600 mA
NUS2045MN
VGS = −4.5 V, ID = 1.0 A
NUS2045MN
VGS = −4.5 V, ID = 600 mA
NUS3045MN
VGS = −4.5 V, ID = 1.0 A
NUS3045MN
RDS(on)
71
71
66
66
95
95
110
110
m
W
Zero Gate Voltage Drain Current
VGS = 0 V, VDS = −16 V
NUS2045MN
VGS = 0 V, VDS = −24 V
NUS3045MN
IDSS
−1.0
−1.0
mA
Turn On Delay (Note 4)
VGS = −4.5 V
NUS2045MN
VGS = −4.5 V
NUS3045MN
ton
7.5
11
ns
Turn Off Delay (Note 4)
VGS = −4.5 V
NUS2045MN
VGS = −4.5 V
NUS3045MN
toff
30.2
28
ns
Input Capacitance (Note 3)
VGS = 0 V, f = 1.0 MHz, VDS = −10 V
NUS2045MN
VGS = 0 V, f = 1.0 MHz, VDS = −15 V
NUS3045MN
Cin
675
750
pF
Gate to Source Leakage Current
VGS = ±8.0 V, VDS = 0 V
NUS2045MN
VGS = ±20 V, VDS = 0 V
NUS3045MN
IGSS
±10
±10
nA
Drain to Source Breakdown Voltage
VGS = 0 V, ID = −250 mA
NUS2045MN
NUS3045MN
V(BR)DSS
20
30
V
Gate Threshold Voltage
VGS = VDS, ID = −250 mA
NUS2045MN
NUS3045MN
V(GS)th
−1.2
−3.0
−0.4
−1.0
V
4. Switching characteristics are independent of operating junction temperature.


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