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NUS5530MN Datasheet(PDF) 2 Page - ON Semiconductor |
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NUS5530MN Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 9 page  NUS5530MN http://onsemi.com 2 MAXIMUM RATINGS FOR PNP TRANSISTORS (TA = 25°C) Rating Symbol Max Unit Collector-Emitter Voltage VCEO −35 Vdc Collector-Base Voltage VCBO −55 Vdc Emitter-Base Voltage VEBO −5.0 Vdc Collector Current − Continuous IC −2.0 Adc Collector Current − Peak ICM −7.0 A Electrostatic Discharge ESD HBM Class 3 MM Class C THERMAL CHARACTERISTICS FOR P−CHANNEL FET Characteristic Symbol Typ Max Unit Maximum Junction−to−Ambient (Note 4) t v 5 sec Steady State RqJA 40 80 50 95 °C/W Maximum Junction−to−Foot (Drain) Steady State RqJF 15 20 °C/W THERMAL CHARACTERISTICS FOR PNP TRANSISTORS Characteristic Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 1) 635 5.1 mW mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 1) 200 °C/W Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 2) 1.35 11 W mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 2) 90 °C/W Thermal Resistance, Junction−to−Lead #1 RqJL 15 °C/W Total Device Dissipation (Single Pulse < 10 sec) PDsingle (Notes 2 & 3) 2.75 W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C 1. FR−4 @ 100 mm2, 1 oz copper traces. 2. FR−4 @ 500 mm2, 1 oz copper traces. 3. Thermal response. |
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