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NUS5530MN Datasheet(PDF) 6 Page - ON Semiconductor |
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NUS5530MN Datasheet(HTML) 6 Page - ON Semiconductor |
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6 / 9 page  NUS5530MN http://onsemi.com 6 TYPICAL ELECTRICAL CHARACTERISTICS FOR P−CHANNEL FET 812 4 016 1200 900 600 300 0 20 −VDS, DRAIN−TO−SOURCE VOLTAGE () Figure 6. Capacitance Variation Figure 7. Gate−to−Source and Drain−to−Source Voltage versus Total Charge QG, TOTAL GATE CHARGE (nC) TJ = 25°C VGS = 0 Coss Ciss Crss 1500 0 1 2 3 4 5 0 1 23 45 6789 10 0 1 2 3 4 5 6 7 8 9 10 11 QG QGD QGS ID = −3.9 A TJ = 25°C QGD/QGS = 3.0 Figure 8. Diode Forward Voltage versus Current 0.3 0.1 0.5 0.7 0.9 5 3 2 1 0 −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) VGS = 0 V TJ = 25°C 4 0.0001 1 0.01 10 0.1 0.01 SQUARE WAVE PULSE DURATION (sec) 0.1 1 0.001 Figure 9. Normalized Thermal Transient Impedance, Junction−to−Ambient Duty Cycle = 0.5 100 1000 0.2 Single Pulse 0.1 0.05 0.02 PER UNIT BASE = RqJA = 80°C/W TJM − TA = PDMZqJA(t) SURFACE MOUNTED PDM t1 t2 DUTY CYCLE, D = t1/t2 |
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