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NUS1204MN Datasheet(PDF) 4 Page - ON Semiconductor

Part No. NUS1204MN
Description  Overvoltage Protection IC with Integrated MOSFET
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NUS1204MN Datasheet(HTML) 4 Page - ON Semiconductor

   
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NUS1204MN
http://onsemi.com
4
P−CHANNEL MOSFET (TA= 25°C, unless otherwise specified)
Parameter
Symbol
Min
Typ
Max
Units
Drain to Source On Resistance
VGS = −4.5 V, ID = 600 mA
VGS = −4.5 V, ID = 1.0 A
RDS(on)
75
75
100
100
m
W
Zero Gate Voltage Drain Current
VGS = −4.5 V, VGS = 0 V, VDS = −10 V
IDSS
−1.0
mA
Turn On Delay (Note 4)
VGS = −4.5 V
ton
5.5
ns
Turn Off Delay (Note 4)
VGS = −4.5 V
toff
20
ns
Input Capacitance
VGS = 0 V, f = 1.0 MHz, VDS = −10 V
Cin
531
pF
Gate to Source Leakage Current
VGS = 8.0 V, VDS = 0 V
IGSS
±10
nA
Drain to Source Breakdown Voltage
VGS = 0 V, ID = −250 mA
V(BR)DSS
−12
V
Gate Threshold Voltage
VGS = VDS, ID = −250 mA
V(GS)th
−0.4
−0.7
−1.0
V
4. Switching characteristics are independent of operating junction temperature.


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