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NUP8010MNT1G Datasheet(PDF) 2 Page - ON Semiconductor |
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NUP8010MNT1G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 4 page NUP8010MN http://onsemi.com 2 MAXIMUM RATINGS Parameter Symbol Value Unit ESD Discharge IEC61000−4−2 Air Discharge Contact Discharge VPP 15 8.0 kV Peak Power Dissipation (8 x 20 mS @ TA = 25°C) Ppk (Note 1) 20 W Operating Temperature Range TOP −40 to 85 °C Storage Temperature Range TSTG −55 to 150 °C Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Nonrepetitive current per Figure 4. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit Maximum Reverse Working Voltage VRWM 3.0 V Breakdown Voltage VBR IR = 1.0 mA 5.3 5.6 5.9 V Leakage Current IR VRWM = 3.3 V 0.01 1.0 mA Clamping Voltage Vc IPP = 1.6 A 13 V Capacitance Cd f = 1 MHz, VR = 0 V 13 17 pF Capacitance Cd f = 1 MHz, VR = 3.0 V 7.0 11.5 pF |
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