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NUP8010MNT1G Datasheet(PDF) 2 Page - ON Semiconductor

Part # NUP8010MNT1G
Description  Low Capacitance Transient Voltage Suppressor Array
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NUP8010MNT1G Datasheet(HTML) 2 Page - ON Semiconductor

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NUP8010MN
http://onsemi.com
2
MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
ESD Discharge IEC61000−4−2
Air Discharge
Contact Discharge
VPP
15
8.0
kV
Peak Power Dissipation (8 x 20
mS @ TA = 25°C)
Ppk
(Note 1)
20
W
Operating Temperature Range
TOP
−40 to 85
°C
Storage Temperature Range
TSTG
−55 to 150
°C
Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Nonrepetitive current per Figure 4.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Maximum Reverse Working Voltage
VRWM
3.0
V
Breakdown Voltage
VBR
IR = 1.0 mA
5.3
5.6
5.9
V
Leakage Current
IR
VRWM = 3.3 V
0.01
1.0
mA
Clamping Voltage
Vc
IPP = 1.6 A
13
V
Capacitance
Cd
f = 1 MHz, VR = 0 V
13
17
pF
Capacitance
Cd
f = 1 MHz, VR = 3.0 V
7.0
11.5
pF


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