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NUP4060AXV6 Datasheet(PDF) 2 Page - ON Semiconductor |
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NUP4060AXV6 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 4 page NUP4060AXV6 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified) Parameter Conditions Symbol Min Typ Max Unit Reverse Working Voltage (D1, D2, and D3) (Note 2) VRWM − − 5.0 V Breakdown Voltage (D1, D2, and D3) IT = 1 mA, (Note 3) VBR 6.2 6.8 7.2 V Breakdown Voltage (VCC) IT = 5 mA, (Note 3) VBR2 15.3 16 17.1 V Reverse Leakage Current (D1, D2, and D3) VRWM = 3 V IR − 0.01 0.5 mA Reverse Leakage Current (VCC) VBR = 11 V IR − − 0.05 mA Capacitance (D1, D2, and D3) VR = 3 V, f = 1 MHz (Line to GND) CJ − 7 10 pF 2. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC or continuous peak operating voltage level. 3. VBR is measured at pulse test current IT. |
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