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NUP1301ML3T1 Datasheet(PDF) 3 Page - ON Semiconductor |
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NUP1301ML3T1 Datasheet(HTML) 3 Page - ON Semiconductor |
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NUP1301ML3T1 http://onsemi.com 3 Figure 1. ESD Test Circuit ESD Input Signal APPLICATION NOTE Electrostatic Discharge A common means of protecting high−speed data lines is to employ low−capacitance diode arrays in a rail−to−rail configuration. Two devices per line are connected between two fixed voltage references such as VCC and ground. When the transient voltage exceeds the forward voltage (VF) drop of the diode plus the reference voltage, the diodes direct the surge to the supply rail or ground. This method has several advantages including low loading capacitance, fast response time, and inherent bidirectionality (within the reference voltages). See Figure 1 for the test circuit used to verify the ESD rating for this device. |
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