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NUF6406MNT1G Datasheet(PDF) 2 Page - ON Semiconductor

Part # NUF6406MNT1G
Description  Low Capacitance 6 Line EMI Filter with ESD Protection
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NUF6406MNT1G Datasheet(HTML) 2 Page - ON Semiconductor

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NUF6406MN
http://onsemi.com
2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
ESD Discharge IEC61000−4−2
Contact Discharge
VPP
8.0
kV
Operating Temperature Range
TOP
−40 to 85
°C
Storage Temperature Range
TSTG
−55 to 150
°C
Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds)
TL
260
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Maximum Reverse Working Voltage
VRWM
5.0
V
Breakdown Voltage
VBR
IR = 1.0 mA
6.0
7.0
V
Leakage Current
IR
VRWM = 3.0 V
1.0
mA
Resistance
RA
IR = 20 mA
85
100
115
W
Capacitance (Notes 1 and 2)
Cd
VR = 2.5 V, f = 1.0 MHz
13
16
pF
Cut−Off Frequency (Note 3)
f3dB
Above this frequency,
appreciable attenuation occurs
138
MHz
1. Measured at 25
°C, VR = 2.5 V, f = 1.0 MHz.
2. Total line capacitance is 2 times the Diode Capacitance (Cd).
3. 50
W source and 50 W load termination.


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