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NUF6001MU Datasheet(PDF) 2 Page - ON Semiconductor

Part No. NUF6001MU
Description  6 Line EMI Filter with ESD Protection in UDFN Package
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NUF6001MU Datasheet(HTML) 2 Page - ON Semiconductor

   
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NUF6001MU
http://onsemi.com
2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
ESD Discharge IEC61000−4−2
Contact Discharge
VPP
18
kV
DC Power per Resistor
PR
100
mW
DC Power per Package
PT
600
mW
Operating Temperature Range
TOP
−40 to 85
°C
Storage Temperature Range
TSTG
−55 to 150
°C
Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds)
TL
260
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Maximum Reverse Working Voltage
VRWM
5.0
V
Breakdown Voltage
VBR
IR = 1.0 mA
6.0
7.0
8.0
V
Leakage Current
IR
VRWM = 3.3 V
10
100
nA
Resistance
RA
IR = 20 mA
85
100
115
W
Capacitance (Notes 1 and 2)
Cd
VR = 2.5 V, f = 1.0 MHz
17
22
pF
Cut−Off Frequency (Note 3)
f3dB
Above this frequency,
appreciable attenuation occurs
120
MHz
1. Measured at 25°C, VR = 2.5 V, f = 1.0 MHz.
2. Total line capacitance is 2 times the Diode Capacitance (Cd).
3. 50 W source and 50 W load termination.


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