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NUF4210MNT1G Datasheet(PDF) 2 Page - ON Semiconductor

Part # NUF4210MNT1G
Description  Low Capacitance 4 Line EMI Filter with ESD Protection in DFN8 1.6 x 1.6 mm Package
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NUF4210MNT1G Datasheet(HTML) 2 Page - ON Semiconductor

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NUF4210MN
http://onsemi.com
2
MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
ESD Discharge IEC61000−4−2
Contact Discharge
Machine Model
Human Body Model
VPP
8.0
0.4
8.0
kV
Operating Temperature Range
TOP
−40 to 85
°C
Storage Temperature Range
TSTG
−55 to 150
°C
Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds)
TL
260
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Maximum Reverse Working Voltage
VRWM
5.0
V
Breakdown Voltage
VBR
IR = 1.0 mA
6.0
7.0
8.0
V
Leakage Current
IR
VRWM = 3.3 V
100
nA
Resistance
RA
IR = 10 mA
85
100
115
W
Capacitance (Notes 1 and 2)
Cd
VR = 2.5 V, f = 1.0 MHz
8.5
11
pF
Cut−Off Frequency (Note 3)
f3dB
Above this frequency,
appreciable attenuation occurs
250
MHz
1. Measured at 25
°C.
2. Total Line Capacitance is two times the Diode Capacitance (Cd).
3. 50
W source and 50 W load termination.


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