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NTLJS4114N Datasheet(PDF) 4 Page - ON Semiconductor |
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NTLJS4114N Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 6 page ![]() NTLJS4114N http://onsemi.com 4 TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 5 5 15 20 25 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation −200 VGS VDS 1000 010 Coss Crss 1600 Ciss Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge Figure 9. Resistive Switching Time Variation versus Gate Resistance RG, GATE RESISTANCE (OHMS) 1 10 100 1000 1 100 tr td(off) td(on) tf 10 VDD = 15 V ID = 3.0 A VGS = 4.5 V 4 0 0.3 VSD, SOURCE−TO−DRAIN VOLTAGE (V) VGS = 0 V Figure 10. Diode Forward Voltage versus Current 0.8 1 0.6 2 Figure 11. Maximum Rated Forward Biased Safe Operating Area 0.1 1 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1 100 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 10 10 SINGLE PULSE TC = 25°C TJ = 150°C 1 ms 100 ms 10 ms dc 10 ms 30 TJ = 25°C 0.1 0.01 0 3 0 QG, TOTAL GATE CHARGE (nC) 5 4 4 ID = 2 A TJ = 25°C VGS QGS QGD QT 2 1 8 8 0 20 12 4 VDS 16 3 0.7 0.5 0.4 See Note 2 on Page 1 400 VDS = 0 V VGS = 0 V TJ = 25°C |