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NTLJF3118N Datasheet(PDF) 2 Page - ON Semiconductor

Part No. NTLJF3118N
Description  Power MOSFET and Schottky Diode 20 V, 4.6 A, uCool N-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NTLJF3118N Datasheet(HTML) 2 Page - ON Semiconductor

   
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NTLJF3118N
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SCHOTTKY DIODE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
VRRM
20
V
DC Blocking Voltage
VR
20
V
Average Rectified Forward Current
IF
2.0
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
Junction−to−Ambient – Steady State (Note 3)
RqJA
83
°C/W
Junction−to−Ambient – t ≤ 5 s (Note 3)
RqJA
58
Junction−to−Ambient – Steady State Min Pad (Note 4)
RqJA
177
3. Surface Mounted on FR4 Board using 2 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface Mounted on FR4 Board using the minimum recommended pad size.
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
20
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
ID = 250 mA, Ref to 25°C
10.4
mV/°C
Zero Gate Voltage Drain Current
IDSS
VDS = 16 V, VGS = 0 V
TJ = 25°C
1.0
mA
TJ = 85°C
10
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±8.0 V
$100
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250 mA
0.4
0.7
1.0
V
Gate Threshold
Temperature Coefficient
VGS(TH)/TJ
−3.0
mV/°C
Drain−to−Source On−Resistance
RDS(on)
VGS = 4.5, ID = 3.8 A
37
65
mW
VGS = 2.5, ID = 2.0 A
46
75
VGS = 1.8, ID = 1.7 A
65
120
Forward Transconductance
gFS
VDS = 10 V, ID =1.7 A
4.2
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
VGS = 0 V, f = 1 MHz, VDS = 10 V
271
pF
Output Capacitance
COSS
72
Reverse Transfer Capacitance
CRSS
43
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 10 V, ID = 3.8 A
3.7
nC
Threshold Gate Charge
QG(TH)
0.3
Gate−to−Source Charge
QGS
0.6
Gate−to−Drain Charge
QGD
1.0
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
td(ON)
VGS = 4.5 V, VDD = 16 V,
ID = 1.0 A, RG = 2.0 W
3.8
ns
Rise Time
tr
4.7
Turn−Off Delay Time
td(OFF)
11.1
Fall Time
tf
5.8
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V, IS =1.0 A
TJ = 25°C
0.69
1.0
V
Reverse Recovery Time
tRR
VGS = 0 V, dISD/dt = 100 A/ms, IS = 1.0 A
10.2
ns
5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.


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