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NTLJF3118N Datasheet(PDF) 1 Page - ON Semiconductor

Part No. NTLJF3118N
Description  Power MOSFET and Schottky Diode 20 V, 4.6 A, uCool N-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NTLJF3118N Datasheet(HTML) 1 Page - ON Semiconductor

   
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© Semiconductor Components Industries, LLC, 2006
October, 2006 − Rev. 0
1
Publication Order Number:
NTLJF3118N/D
NTLJF3118N
Power MOSFET and
Schottky Diode
20 V, 4.6 A, mCool] N−Channel, with
2.0 A Schottky Barrier Diode, 2x2 mm
WDFN Package
Features
WDFN 2x2 mm Package Provides Exposed Drain Pad for
Excellent Thermal Conduction
Footprint Same as SC−88 Package
1.8 V VGS Rated RDS(on)
Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
Low VF 2 A Schottky Diode
This is a Pb−Free Device
Applications
DC−DC Boost/Buck Converter
Low Voltage Hard Disk DC Power Source
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
20
V
Gate−to−Source Voltage
VGS
±12
V
Continuous Drain Current
(Note 1)
Steady
State
TA = 25°C
ID
3.8
A
TA = 85°C
2.8
t ≤ 5 s
TA = 25°C
4.6
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
PD
1.5
W
t ≤ 5 s
2.2
Continuous Drain Current
(Note 2)
Steady
State
TA = 25°C
ID
2.6
A
TA = 85°C
1.9
Power Dissipation
(Note 2)
TA = 25°C
PD
0.7
Pulsed Drain Current
tp = 10 ms
IDM
18
A
Operating Junction and Storage Temperature
TJ,
TSTG
−55 to
150
°C
Source Current (Body Diode)
IS
1.8
A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 2 in sq pad size
(Cu area = 1.127 in sq [2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size.
1
2
3
6
5
4
A
N/C
D
K
G
S
http://onsemi.com
20 V
20 V
75 mW @ 2.5 V
65 mW @ 4.5 V
2.0 A
RDS(on) Max
2.0 A
0.41 V
ID Max
V(BR)DSS
MOSFET
SCHOTTKY DIODE
VR Max
IF Max
VF Typ
120 mW @ 1.8 V
G
S
N−CHANNEL MOSFET
D
K
A
SCHOTTKY DIODE
JK
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
JK M G
G
1
2
3
6
5
4
WDFN6
CASE 506AN
MARKING
DIAGRAM
(Top View)
1
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
PIN CONNECTIONS
K
D
(Note: Microdot may be in either location)
1.7 A
3.8 A


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