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NTLJF3117P Datasheet(PDF) 4 Page - ON Semiconductor

Part No. NTLJF3117P
Description  Power MOSFET and Schottky Diode −20 V, −4.1 A, P−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, uCool Package
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NTLJF3117P Datasheet(HTML) 4 Page - ON Semiconductor

   
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NTLJF3117P
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4
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
12
0.15
5
1.4
1.6
1.2
0.8
0.6
10000
0
4.5
2
1
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
1.0
2.0
1.5
Figure 3. On−Resistance versus Drain Current
−ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
−ID, DRAIN CURRENT (AMPS)
Figure 5. On−Resistance Variation with
Temperature
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−50
50
25
0
−25
75
125
100
1
212
10
4
3
1
2
VDS ≥ 10 V
TJ = 25°C
TJ = −55°C
TJ = 125°C
VGS = 0 V
ID = −2.2 A
VGS = −4.5 V
3
TJ = 100°C
TJ = 150°C
2
0
1.5
TJ = 25°C
20
VGS = −1.9 V to −6 V
−1.5 V
3
1000
4
4
0
4
TJ = 25°C
150
10
2.5
−1.4 V
−1.3 V
−1.2 V
TJ = 25°C
VGS = −4.5 V
TJ = −55°C
TJ = 100°C
0
VGS = −4.5 V
VGS = −2.5 V
6
8
14
16
18
2
0.5
2.5
3
5
3.5
−1.6 V
−1.7 V
1
3
5
0.05
100
2.5
1.5
0.5
0.5
1.5
2.5
3.5
4.5
−1.8 V
0.1
0.05
0.1
0.04
0.07
0.06
0.08
0.09
4
1.0


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