Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

NTLJF3117P Datasheet(PDF) 1 Page - ON Semiconductor

Part No. NTLJF3117P
Description  Power MOSFET and Schottky Diode −20 V, −4.1 A, P−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, uCool Package
Download  8 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
Logo 

NTLJF3117P Datasheet(HTML) 1 Page - ON Semiconductor

   
Zoom Inzoom in Zoom Outzoom out
 1 / 8 page
background image
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 2
1
Publication Order Number:
NTLJF3117P/D
NTLJF3117P
Power MOSFET and
Schottky Diode
−20 V, −4.1 A, P−Channel, with 2.0 A
Schottky Barrier Diode, 2x2 mm,
mCool] Package
Features
FETKYt Configuration with MOSFET plus Low Vf Schottky Diode
mCOOLt Package Provides Exposed Drain Pad for Excellent
Thermal Conduction
2x2 mm Footprint Same as SC−88 Package Design
Independent Pinout Provides Circuit Design Flexibility
Low Profile (< 0.8 mm) for Easy Fit in Thin Environment
High Current Schottky Diode: 2 A Current Rating
This is a Pb−Free Device
Applications
Optimized for Portable Applications like Cell Phones, Digital
Cameras, Media Players, etc.
DC−DC Buck Circuit
Li−Ion Battery Applications
Color Display and Camera Flash Regulators
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−20
V
Gate−to−Source Voltage
VGS
±8.0
V
Continuous Drain
Current (Note 1)
Steady
State
TA = 25°C
ID
−3.3
A
TA = 85°C
−2.4
t
≤ 5 s
TA = 25°C
−4.1
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
PD
1.5
W
t
≤ 5 s
2.3
Continuous Drain
Current (Note 2)
Steady
State
TA = 25°C
ID
−2.3
A
TA = 85°C
−1.6
Power Dissipation
(Note 2)
TA = 25°C
PD
0.71
W
Pulsed Drain Current
tp = 10 ms
IDM
−20
A
Operating Junction and Storage Temperature
TJ, TSTG
−55 to
150
°C
Source Current (Body Diode) (Note 2)
IS
−1.9
A
Lead Temperature for Soldering Purposes
(1/8
″ from case for 10 s)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
of 30 mm2, 2 oz Cu.
1
2
3
6
5
4
A
N/C
D
K
G
S
http://onsemi.com
−20 V
30 V
135 m
W @ −2.5 V
100 m
W @ −4.5 V
2.0 A
RDS(on) MAX
−4.1 A
0.47 V
ID MAX (Note 1)
V(BR)DSS
MOSFET
SCHOTTKY DIODE
VR MAX
IF MAX
VF TYP
200 m
W @ −1.8 V
G
S
P−CHANNEL MOSFET
D
K
A
SCHOTTKY DIODE
JH
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
JHM
G
G
1
2
3
6
5
4
WDFN6
CASE 506AN
MARKING
DIAGRAM
(Top View)
1
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION
PIN CONNECTIONS
K
D


Html Pages

1  2  3  4  5  6  7  8 


Datasheet Download




Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Alldatasheet API   |   Link Exchange   |   Manufacturer List
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn