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NTLJD2105L Datasheet(PDF) 2 Page - ON Semiconductor

Part No. NTLJD2105L
Description  POWER MOSFET 8 V, 4.3 A, uCool High Side Load Switch with Level Shift, 2x2 mm WDFN Package
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NTLJD2105L Datasheet(HTML) 2 Page - ON Semiconductor

   
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NTLJD2105L
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2
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
Junction−to−Ambient – Steady State (Note 3)
RqJA
80
°C/W
Junction−to−Ambient – t
v 5 s (Note 3)
RqJA
38
°C/W
Junction−to−Ambient – Steady State Min Pad (Note 4)
RqJA
180
°C/W
3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Q2 Drain−to−Source Breakdown
Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
−8.0
V
Q2 Forward Leakage Current
IFL
VON/OFF = 0 V,
VIN = 8.0 V
TJ = 25°C
0.1
mA
TJ = 85°C
1
Q1 Gate−to−Source Leakage
Current
IGSS
VDS = 0 V, VGS1 = ±6 V
±100
nA
Q1 Diode Forward On−Voltage
VSD
IS = −1.0 A, VGS1 = 0 V
−0.8
−1.1
V
ON CHARACTERISTICS
Q1 ON/OFF Voltage
VON/OFF
1.5
8.0
Q1 Gate Threshold Voltage
VGS1(TH)
VGS1 = VDS1, ID = 250 mA
0.40
1.0
V
Q2 Input Voltage
VIN
1.8
8.0
V
Q2 Drain−to−Source On
Resistance
RDS(on)
VIN = 4.5 V, IL = 4.0 A
33
50
m
W
VIN = 2.5 V, IL = 3.0 A
40
60
VIN = 1.8 V, IL = 1.7 A
60
80
VIN = 1.5 V, IL = 1.2 A
75
115
Q2 Load Current
IL
VDROP v 0.2 V, VIN = 2.5 V, VON/OFF = 1.5 V
1.0
A
VDROP v 0.3 V, VIN = 1.8 V, VON/OFF = 1.5 V
1.0


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