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NTK3134N Datasheet(PDF) 2 Page - ON Semiconductor

Part No. NTK3134N
Description  Power MOSFET 20 V, 890 mA, Single N−Channel with ESD Protection, SOT−723
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NTK3134N Datasheet(HTML) 2 Page - ON Semiconductor

   
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NTK3134N
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2
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
Junction−to−Ambient – Steady State
(Note 3)
RqJA
280
°C/W
Junction−to−Ambient – t = 5 s
(Note 3)
RqJA
228
Junction−to−Ambient – Steady State Minimum Pad
(Note 4)
RqJA
400
3. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
4. Surface mounted on FR4 board using the minimum recommended pad size
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown
Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
20
V
Drain−to−Source Breakdown
Voltage Temperature Coefficient
V(BR)DSS/TJ
ID = 250 mA, Reference to 25°C
18
mV/
°C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = 16 V
TJ = 25°C
1.0
mA
TJ = 125°C
2.0
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±4.5 V
±0.5
mA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250 mA
0.45
1.2
V
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
2.4
mV/
°C
Drain−to−Source On Resistance
RDS(on)
VGS = 4.5 V, ID = 890 mA
0.20
0.35
W
VGS = 2.5 V, ID = 780 mA
0.26
0.45
VGS = 1.8 V, ID = 700 mA
0.43
0.65
VGS = 1.5 V, ID = 200 mA
0.56
1.2
Forward Transconductance
gFS
VDS = 10 V, ID = 800 mA
1.6
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
VGS = 0 V, f = 1 MHz, VDS = 16 V
79
120
pF
Output Capacitance
COSS
13
20
Reverse Transfer Capacitance
CRSS
9.0
15
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)
Turn On Delay Time
td(ON)
VGS = 4.5 V, VDS = 10 V, ID = 500 mA,
RG = 10 W
6.7
ns
Rise Time
tr
4.8
TurnOff Delay Time
td(OFF)
17.3
Fall Time
tf
7.4
DRAIN SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V, IS = 350 mA
TJ = 25°C
0.75
1.2
V
Reverse Recovery Time
tRR
VGS = 0 V, dISD/dt = 100 A/ms,
IS = 1.0 A, VDD = 20 V
8.1
ns
Charge Time
ta
6.4
Discharge Time
tb
1.7
Reverse Recovery Charge
QRR
3.0
nC
5. Pulse Test: pulse width = 300
ms, duty cycle = 2%
6. Switching characteristics are independent of operating junction temperatures


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