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NTGD3133P Datasheet(PDF) 1 Page - ON Semiconductor

Part No. NTGD3133P
Description  Power MOSFET −20 V, −2.5 A, P−Channel, TSOP−6 Dual
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NTGD3133P Datasheet(HTML) 1 Page - ON Semiconductor

   
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© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 0
1
Publication Order Number:
NTGD3133P/D
NTGD3133P
Power MOSFET
−20 V, −2.5 A, P−Channel, TSOP−6 Dual
Features
Reduced Gate Charge for Fast Switching
−2.5 V Gate Rating
Leading Edge Trench Technology for Low On Resistance
Independent Devices to Provide Design Flexibility
This is a Pb−Free Device
Applications
Li−Ion Battery Charging
Load Switch / Power Switching
DC to DC Conversion
Portable Devices like PDA’s, Cellular Phones, and Hard Drives
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−20
V
Gate−to−Source Voltage
VGS
±12
V
Continuous Drain
Current (Note 1)
Steady
State
TA = 25°C
ID
−2.3
A
TA = 85°C
−1.6
t
≤ 5 s
TA = 25°C
−2.5
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
PD
1.1
W
t
≤ 5 s
1.3
Continuous Drain
Current (Note 2)
Steady
State
TA = 25°C
ID
−1.6
A
TA = 85°C
−1.2
Power Dissipation
(Note 2)
TA = 25°C
PD
0.56
W
Pulsed Drain Current
tp = 10 ms
IDM
±7.0
A
Operating Junction and Storage Temperature
TJ, TSTG
−55 to
150
°C
Source Current (Body Diode)
IS
−0.8
A
Lead Temperature for Soldering Purposes
(1/8
″ from case for 10 s)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size.
1
2
3
6
5
4
G1
S2
G2
D1
S1
D2
http://onsemi.com
P−CHANNEL MOSFET
SC = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
TSOP6
CASE 318G
MARKING
DIAGRAM
(Top View)
PIN CONNECTION
−20 V
200 m
W @ −2.5 V
145 m
W @ −4.5 V
RDS(on) MAX
−2.5 A
ID MAX
V(BR)DSS
G1
D1
S1
SC M
G
G
1
1
Device
Package
Shipping
ORDERING INFORMATION
NTGD3133PT1G
TSOP6
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
P−CHANNEL MOSFET
G2
D2
S2


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